Semiconductor Science and Technology · 2009 · 12 citations · 20 references
EngineeringElectrical EngineeringOptical MaterialsOptoelectronicsPhotonicsInfrared Optical MaterialsInfrared SpectroscopyMultispectral ImagingOptical ImagingPhotodetectorsQuantum DotsFocal Plane ArraysFocal Plane OpticsImage Sensor TechnologyInfrared ArraysInfrared OpticsMultispectral Imaging SensorsMultispectral SensingSemiconductor Quantum Dots
A voltage-tunable multispectral 320 × 256 infrared imaging focal plane array (FPA) is reported. It is based on InAs/GaAs quantum dots infrared phototdetctors (QDIP) with GaAs and In0.20Ga0.80As capping layers, corresponding to the extended middle-wave infrared (5–8 µm) and long-wave infrared (8–12 µm) detection bands, respectively. The FPA shows a noise-equivalent temperature difference of 172 mK at an operating temperature of 67 K. Voltage-tunable multispectral imaging was also achieved. Since each of the detection spectra of the QD FPA can be individually tuned by engineering its QD capping layer, this approach offers great flexibility in designing of a multispectral FPA.
20
High detectivity InAs quantum dot infrared photodetectors
Eui‐Tae Kim, A. Madhukar, Zhengmao Ye et al. · Applied Physics Letters · 2004 · 209 citations
Subhananda Chakrabarti, Adrienne D. Stiff‐Roberts, P. Bhattacharya et al. · IEEE Photonics Technology Letters · 2004 · 165 citations