A 5.4GHz 0.35μm BiCMOS FBAR resonator oscillator in above-IC technology

Abstract

A 5.4GHz 0.35μm BiCMOS SiGe FBAR oscillator is presented. The FBAR resonator is directly integrated above the silicon IC, thus eliminating the bond wires and associated parasitics of the classical FBAR oscillators. The oscillator achieves a phase noise of -117.7dBc/Hz at 100kHz offset from 5.46GHz carrier frequency while the oscillator core draws 1.7mA from 2.7V