2014 · 39 citations · 2 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAvalanche ProcessesDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAvalanche BreakdownBreakdown MechanismsElectroluminescenceOptical DetectionSchottky Barrier DiodesSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesTemperature Dependence
The avalanche behavior of 650V and 1200V SiC Merged-PN-Schottky diodes was investigated as function of temperature by means of electrical measurements, simulation and optical detection of the avalanche rated electroluminescence. A very good fit between the simulated and experimentally determined breakdown field strengths could be achieved. The TC of the avalanche was 0.14V/K resp. 0.35V/K for the 650V and 1200V devices. For both voltage classes E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Br</sub> was ~3.3MV/cm, clearly above the value of 2.5MV/cm which is frequently assumed in literature for 4H SiC. The devices can withstand long term continuous avalanche as well as single pulse avalanche with a junction temperature rise of ~200°C. Finally the observations are compared with the avalanche behavior of SiC JFETs. As expected, these FETs show comparable T-dependence and electroluminescence patterns as the diodes.
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Ionization rates and critical fields in 4H silicon carbide
Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 398 citations
"2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness
Roland Rupp, Michael Treu, Fanny Björk et al. · 2006 · 54 citations