Intersubband Raman Laser

Abstract

An intersubband Raman laser has been realized in an artificial GaAs/AlGaAs three-level quantum-well structure. A CO2 laser in resonance with the one-to-three level transition is used as the pump, while the lasing emission occurs via the three-to-two level transition. The one-to-two level spacing is designed to be in resonance with the AlAs-like longitudinal optical phonon mode, favoring the Raman process. This work presents an alternative mechanism for realizing intersubband lasers and opens up new possibilities in reaching the far infrared region and achieving room-temperature operation.