Tunable Stimulated Raman Scattering from Conduction Electrons in InSb

Abstract

We report the observation of tunable stimulated Raman scattering from the spin-flip process of conduction electrons in InSb. With the C${\mathrm{O}}_{2}$ laser at 10.6 \ensuremath{\mu} as the pump, the Raman laser radiation can be tuned from \ensuremath{\sim}11.7 to \ensuremath{\sim}13.0 \ensuremath{\mu} by varying the magnetic field from \ensuremath{\sim}48 to \ensuremath{\sim}100 kG. Raman laser power output of \ensuremath{\sim}1-W peak with linewidth less than 0.05 ${\mathrm{cm}}^{\ensuremath{-}1}$ has been obtained. Raman conversion efficiency of \ensuremath{\sim}5\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}4}$ is reported.