The activation of Mg in GaN by annealing with minority-carrier injection

Abstract

The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 °C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an open-circuit configuration even in inert gas, and then reactivated by annealing under minority-carrier injection. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon.