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Carrier transport in nanocrystalline field-effect transistors: Impact of interface roughness and geometrical carrier trap
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2010
Year
EngineeringNanodevicesNanocomputingCharge TransportInterface RoughnessSemiconductor DeviceSemiconductor NanostructuresSemiconductorsElectronic DevicesNanoelectronicsCharge Carrier TransportDevice ModelingSemiconductor TechnologyElectrical EngineeringHorst HahnPhysicsNanotechnologyCarrier TransportSemiconductor Device FabricationGeometrical Carrier TrapMicroelectronicsNanophysicsElectronic MaterialsApplied Physics
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Koshi Okamura, Horst Hahn; Carrier transport in nanocrystalline field-effect transistors: Impact of interface roughness and geometrical carrier trap. Appl. Phys. Lett. 11 October 2010; 97 (15): 153114. https://doi.org/10.1063/1.3495798 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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