Dark-field electron microscopy of dissociated dislocations and surface steps in silicon using forbidden reflections

Abstract

Abstract Abstract Dissociated dislocations in (111) foils of silicon have been imaged in the forbidden reflection of type ⅓(422). Largo contrast effects are observed at stacking faults, and thickness fringes corresponding to changes of thickness of a repeat unit (3d111) are revealed. The partial dislocations bounding the fault are observed as very narrow images. The contrast effects are explained in terms of kinematical theory, and the potential applications of this technique are discussed.