Electromigration in Al/Si contacts—Induced open-circuit failure

Abstract

Open-circuit failures caused by electromigration in Al/Si contacts are studied. This failure mode is associated with Al depletion or vacancy condensation over the entire position contact area. The contacts exhibiting this failure are those closest to bonding pads. This location preference is attributed to vacancy supplies associated with the large bonding pad. The current acceleration factor for electromigration open failure is found to be 2.5 ± 0.5 and the activation energy is 0.5 ± 0.1 eV. Our empirical data suggests that, for operating temperatures below about 100°C, open-circuit failure will be dominant over junction leakage failure.