Applied Physics Letters · 1996 · 52 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsThermal Properties Of SemiconductorsActivation EnergyActivation Energy DeterminationDiamond SemiconductorsField EmissionTemperature DependenceTemperature Dependence MeasurementTemperature Dependence Of Electrical PropertiesThermal Stability
This letter reports on the measurement of the field emission current dependence of doped polycrystalline diamond (PCD) films on temperature. The motivation for this type of measurement was to assess the thermal stability of PCD field emitters and gain some insight into a possible emission mechanism. Between room temperature and 300 °C, for a fixed electric field, the emission current from B doped films was found to remain constant. Heavily doped nitrogen films were also examined and the emission current was found to increase exponentially with an activation energy of 0.16 eV.