High-performance few-layer-MoS<inf>2</inf> field-effect-transistor with record low contact-resistance

Abstract

Recently, Molybdenum Disulphide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) has emerged as a promising candidate for low-power digital applications. Compared to monolayer (1L) MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , few-layer MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (FL-MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) is attractive due to its higher density of states (DOS). However, a comprehensive study of FL-MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> field-effect-transistor (FET) is lacking. In this paper, we report a high-performance FL-MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FET with record low contact resistance (~0.8 KΩ.μm) that is close to the value for metal-silicon contacts in CMOS technology. A correlation of device performance and the number of MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers is established to guide the design of high-performance FL-MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FET. Moreover, it is found that edge contacts (metal contact to each edge of MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers) play a key role in the efficient injection of electrons from metal to MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . This is confirmed by experiments as well as density functional theory (DFT) calculations. Moreover, a top gated FL-MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (5 nm) FET is also demonstrated with a robust current saturation and high drive current (24 μA/μm) even without source/drain doping.