Lattice distortions for arsenic in single-crystal silicon

Abstract

Extended x-ray-absorption fine-structure measurements for 0.1, 0.7, and 7 at.% arsenic impurities in single-crystal silicon yield As-to-Si nearest-neighbor distances of 2.41 \ifmmode\pm\else\textpm\fi{} 0.02 \AA{}, which are 0.06 \AA{} (2.5%) greater than the Si-to-Si distance in pure silicon. Next-nearest-neighbor distances are 3.85 \ifmmode\pm\else\textpm\fi{} 0.02 \AA{}, only 0.01 \AA{} (0.3%) greater than the corresponding Si-to-Si distance.