Moisture-resistant ZnO transparent conductive films with Ga heavy doping

Abstract

Moisture-resistant ZnO transparent conductive films were formed with Ga heavy doping by off-axis-type rf magnetron sputtering. The resistivity of 12.4wt% Ga-doped ZnO is 1.3×10−3Ωcm and changes by less than 3% over a 2000h reliability test at a temperature of 85°C and a humidity of 85%. The crystal structural analysis of the heavily Ga-doped ZnO films indicates that the c axis grows along various directions, which is quite different from the conventional c-axis oriented growth. The effect of heavy doping is discussed based on the crystal structural transformation and carrier compensation by excess Ga segregated in the film.