Applied Physics Letters · 2004 · 31 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesInfrared DetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCurrent-voltage RelationsDiode Current-voltage CharacteristicsFlip-chip BondingHeterostructure DevicesRecombination MechanismsReverse Bias CharacteristicsSiliconSilicon Infrared Detectors
Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this material using mesa technology and flip-chip bonding. We have demonstrated excellent resistance-area product characteristics for diodes with a 10.2μm cutoff wavelength. R0A values approaching 103Ωcm2 at 80K have been measured and the resistance-area product maintained above 102Ωcm2 at 1V reverse bias. Variable temperature R0A values correspond to expected generation-recombination loss mechanisms between 60 and 120K. Current-voltage characteristics of two diodes at opposite sides of an array indicate that a very uniform imaging long-wavelength infrared array could be fabricated from this material.
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A new MOVPE technique for the growth of highly uniform CMT
Jon Tunnicliffe, S.J.C. Irvine, O. D. Dosser et al. · Journal of Crystal Growth · 1984 · 223 citations