Nonlithographic nanowire-array tunnel device: Fabrication, zero-bias anomalies, and Coulomb blockade

Abstract

Coulomb blockade (CB) was observed in Al/aluminum oxide/Ni nanowire single-junction arrays fabricated by electrochemical deposition of Ni into porous aluminum oxide nanotemplates. The bias dependence of the tunneling current and the temperature dependence of the zero-bias anomalies observed in the tunneling spectra are shown to accord well with the theory of Nazarov for CB in systems where the leads play a significant role. Direct scanning tunneling microscopy measurements of the nanowire leads resistance confirms it to be the regime required by the theory.