X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD - Concepedia

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X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD

11

Citations

15

References

2005

Year

T. S. Jeong, J.H. Kim, Min Han, K. Y. Lim, C. J. Youn

Journal of Crystal Growth

Wide-bandgap SemiconductorEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorCathodoluminescence StudyCompound SemiconductorOptoelectronics

References

	Year	Citations

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