Optical Determination of Carrier Concentration and Mobility in p and n Bulk GaSb by Infrared Reflectivity Spectral Analysis

Abstract

Abstract Infrared reflectivity measurements are made on both, n and p bulk GaSb at 300 K to determine carrier concentration and mobility of the material by using a least‐square fit on a non‐linear model to experimental data after their transfer from spectrometer to a compatible computer in ASCII code. For n‐type GaSb a method is proposed for calculating density and mobility of carriers from plasma frequency and carrier scattering time given by the fit, taking into account contributions of both, Γ and L band electrons to conductivity. Good agreement is obtained between density and mobility given by reflectivity and those given by Hall measurements for density range 1.2 × 10 17 to 3 × 10 18 cm −3 .