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Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanotechnologyNanoelectronicsBias Temperature InstabilityApplied PhysicsNanoscale Planar MosfetMicroelectronicsBulk Finfet Devices