Publication | Closed Access
All-semiconductor room-temperature terahertz time domain spectrometer
33
Citations
10
References
2008
Year
Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsMum-gap Bow-tie-shaped ElectrodesTerahertz PhysicsTerahertz Material PropertiesOptical SpectroscopyPhotonicsElectrical EngineeringWater Absorption LinesTerahertz SpectroscopyPhysicsTerahertz NetworkTerahertz ScienceTerahertz DevicesNatural SciencesSpectroscopyApplied PhysicsTerahertz TechniqueFirst DemonstrationOptoelectronicsTerahertz Applications
We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 mum-gap bow-tie-shaped electrodes. The coherently detected spectrum has a bandwidth close to 1 THz, in which water absorption lines at 0.555 and 0.751 THz can be resolved.
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