IEEE Transactions on Nuclear Science · 1983 · 38 citations · 6 references
Natural SciencesComputer EngineeringPhysicsFault-tolerant ComputingRadiation MeasurementRadiation PhysicsAccelerator PhysicsHeavy-ion PhysicsElectron Cross SectionsHeavy Ion RadiationHeavy-ion AcceleratorsHeavy-ion ReactionsMemory Circuit DesignNon-volatile Cmos MemorySingle Event EffectsSingle Event Upset Modeling
Heavy ion induced single event upsets and latch-up in 4K CMOS RAMs and PROMs have been demonstrated using both the Harwell Variable Energy Cyclotron and a laboratory Californium-252 source. The latter provides a novel and convenient alternative which complements heavy ion accelerator techniques. A number of memories have been examined by both techniques, enabling appropriate cross sections to be measured.
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