Cosmic Ray Simulation Experiments for the Study of Single Event Upsets and Latch-Up in CMOS Memories

Abstract

Heavy ion induced single event upsets and latch-up in 4K CMOS RAMs and PROMs have been demonstrated using both the Harwell Variable Energy Cyclotron and a laboratory Californium-252 source. The latter provides a novel and convenient alternative which complements heavy ion accelerator techniques. A number of memories have been examined by both techniques, enabling appropriate cross sections to be measured.