Reversible optical storage on a low-doped Te-based chalcogenide film with a capping layer

Abstract

A reversible optical storage medium with more than 4 × 104 write/erase cycles has been realized using a low-doped Te film of composition Te96.8As3.0Ge0.2 encapsulated by a thick capping layer. A number of properties relevant to its storage application were also determined experimentally: the sensitivity range for writing (0.3–4 nJ) and erasing (34–40 nJ), the contrast of the readout signal (2:1), the limit for the erasing time (≈ 10 μsec), the bit permanence (3 weeks), and the readout signal behavior during writing and erasing.