IEEE Sensors Journal · 2013 · 33 citations · 29 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsNanotechnologySemiconductor DevicesDetector TechnologyNanoelectronicsNoise In Semiconductor DevicesPhotodetectorsSemiconductor DetectorsUltraviolet DetectorsLow-frequency NoiseNanorodsNoise CharacteristicsPhotodetectionPhotodetector DetectivitySchottky Barrier PhotodetectorsSchottky PhotodetectorsSemiconductor Nanorods
A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at -1V. In addition, the noise equivalent power and normalized detectivity (D*) of the photodetector are 6.74×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-13</sup> W and 3.29 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cmHz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sup> W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> at -1V, respectively.
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ZnO Nanowire UV Photodetectors with High Internal Gain
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