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Large internal dipole moment in InGaN/GaN quantum dots
59
Citations
17
References
2010
Year
Electrical EngineeringPhotoluminescenceEngineeringPhysicsNanoelectronicsApplied PhysicsQuantum DotsSpectral DiffusionDirect ObservationSemiconductor NanostructuresAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronicsCompound SemiconductorExcitonic Complexes
Direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported. Characteristic traces of spectral diffusion, observed in cathodoluminescence of InGaN/GaN quantum dots, allow deducing the magnitude of the intrinsic dipole moment. Our experimental results are in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.
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