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Stark broadening and shift measurements of visible Si II lines
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Citations
23
References
2002
Year
Stark ParametersEngineeringExperimental Stark WidthInterferometryPlasma SciencePlasma PhysicsStark BroadeningSilicon On InsulatorPlasma ElectronicsOptical PropertiesOptical DiagnosticsPlasma TheoryIon EmissionPlasma DiagnosticsPhotonicsElectron DensityPhysicsAtomic PhysicsNatural SciencesSpectroscopyApplied Physics
A set of experimental Stark width and shift parameters of visible singly ionized silicon spectral lines is reported in this paper. Measurements have been made on a pulsed plasma generated in a linear discharge lamp filled with a mixture of silane and helium. Electron density and temperature in this plasma range from 0.2 to 0.9 × 1023 m−3 and from 16 000 to 20 000 K respectively. Electron density has been simultaneously determined by two-wavelength interferometry and from Stark broadening of He I 501.6 nm, He I 728.1 nm and Hα lines. Temperature has been simultaneously determined from a Boltzmann plot of He I lines, from absolute emission of He I lines and from a Boltzmann plot of Si II lines. Dependences of measured Stark parameters on electron density and temperature have been investigated and the final results have been compared with most of the previous experimental data as well as with some theoretical models.
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