InP MISFET's with plasma anodic Al₂O₃and interlayed native Oxide gate insulators

Abstract

InP MISFET's, with native oxide film interlayed between plasma anodic Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> film and the InP substrate, has been fabricated and showed the instability of the drain current reduced less than ± 4 percent for the period of 5 µs ∼ 5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s. The effective electron mobility is 2100 ∼ 2600 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V.s at room temperature. The CV characteristics of MIS diodes and AES in-depth profiles are also discussed with respect to effects of interlaying native oxide film on device characteristics.