Growth of SiO2 films by TEOS-PECVD system for microelectronics applications

Downstream microwave plasma-enhanced chemical vapor deposition of oxide using tetraethoxysilane

C. S. Pai, C.-P. Chang · Journal of Applied Physics · 1990 · 91 citations

Natural Sciences, Materials Engineering, Materials Science +17

The role of oxygen excitation and loss in plasma-enhanced deposition of silicon dioxide from tetraethylorthosilicate

Gregory B. Raupp, Timothy S. Cale, H.P.W. Hey · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 71 citations

Natural Sciences, Materials Engineering, Materials Science +15

Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films

W. Patrick, G. C. Schwartz, J. Chapple-Sokol et al. · Journal of The Electrochemical Society · 1992 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17

Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Using Tetraethylorthosilicate (TEOS)

Ismail Emesh, Giulio D'Asti, Jacques S. Mercier et al. · Journal of The Electrochemical Society · 1989 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +14

Stress in SiO2 Films Deposited by Plasma and Ozone Tetraethylorthosilicate Chemical Vapor Deposition Processes

K. Ramkumar, Arjun N. Saxena · Journal of The Electrochemical Society · 1992 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +16