InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination

Abstract

We have applied the modified droplet epitaxy method using sulfur termination to fabricate InAs quantum dots on GaAs(001) substrates for the first time. It is observed that the S-terminated surface effectively prevents the two-dimensional growth of InAs, forming InAs nanocrystals. From the magneto-photoluminescence measurements of this structure, three-dimensional quantum confinement effect was confirmed. This modified droplet epitaxy method is promising for the fabrication of quantum dots, not only in the lattice-matched system but also in the lattice-mismatched system.