Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

Abstract

Passive crossbar arrays of oxide-based memory elements hold the promise of high density and speed nonvolatile memory. However, realization of the expected paradigm has been hindered by a so-called misreading problem resulting from sneak paths in passive crossbar arrays. We introduce a resistive memory element consisting of two coupled interfaces in a metal/doped oxide/metal structure. The element avoids the misreading problem by the nonlinearity in current-voltage loops and significantly reduces the write current. The distinct device characteristics may also be applicable in programmable analog circuits and neuromorphic circuits.