A dielectric calculation of energy loss to valence electrons of channelled protons in silicon

Abstract

The Bonsignori-Desalvo theory for calculating the energy loss of protons to valence electrons under channelling conditions through the non-diagonal components of the response function has been applied to silicon. Analytical approximations to the components of the response function are developed and their range of validity discussed. Local stopping power maps at 100 keV are obtained for the (110), (112) and (111) channels and the link with the distribution of valence electrons in a covalent semiconductor is analysed. By using a Monte Carlo computer model to simulate ion paths it is possible to make a significant comparison with experiments by different authors, obtaining a good agreement.