InSb Carrier Lifetime in High Electric Field

Abstract

The transient behavior of excess carriers (electron-hole plasma) in n -InSb at 77°K produced by an intense Q -switched CO 2 laser beam and also by impact ionization is investigated under various applied electric fields. It was found in this experiment that the lifetime of these excess carriers strongly depends on the applied electric field, possibly due to detrapping of trapped holes at higher fields through collisions with free carriers.