In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry - Concepedia

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In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

30

Citations

9

References

1998

Year

Shinya Sudo, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki, Hiroshi Komiyama, Kunio Tada

Thin Solid Films

EngineeringKinetic EllipsometrySurface ScienceApplied PhysicsIngaas/inp HeterostructureChemistryMolecular Beam EpitaxyEpitaxial GrowthSpectroscopic PropertyCompound Semiconductor

References

	Year	Citations

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