IEEE Transactions on Magnetics · 1983 · 22 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor DevicesAlloysMetalsCrack Propagation AnalysisCrack Propagation MechanismsDiffusion Layer GrowthLayer-by-layer Growth
A sensitive AC technique has been used to investigate T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> and layer growth in Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Sn diffusion layer material. This method and the more frequently used resistive T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> measurement have been used in conjunction to examine several pertinent topics in diffusion layer growth. Firstly, it has been shown that the 37% volume expansion that occurs when Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Sn is formed can be accommodated without cracks forming. Secondly, by deliberately deforming the layer the effects of cracks have been investigated; the inductive and resistive methods being sensitive to cracks along and across the layer respectively. Thirdly, by deconvoluting the increase in amplitude of the inductive signal with annealing time (t) the layer thickness (δ) of Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Sn in a standard multifilamentary wire can be plotted; for IMI All Bronze (3000 × 5μm filaments) at 750°C <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\delta\sim t^{0.25}</tex> .
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