Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1983 · 65 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor Thin FilmsSolar CellsCarrier ConcentrationCrystal PerfectionDevice Characteristics DetectionMolecular Beam EpitaxySuperlattice FormationSuperlattice GrowthSuperlattice MaterialsSuperlattices
We present here a general survey of our activity since 1981. We show that n- or p-type CdxHg1−xTe with low carrier concentration, high mobility and crystal perfection limited by the substrate itself can be grown by molecular beam epitaxy (MBE) between 180 and 210 °C onto CdTe(111) and (100) orientation. We report for the first time the characteristics of a photovoltaic device processed on a p-type CdxHg1−xTe MBE layer which proves that this material can be grown by MBE with a detection device specification. We also give some information concerning 100 periods of 224 Å CdTe–HgTe superlattice previously reported.