Two-dimensional numerical simulation of HgCdTe infrared detectors

Abstract

In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, HanYang university SEmiconductor DEvice Simulator (HYSEDES). The modified transport models are included to describe the inherent natures of HgCdTe such as the degeneracy,the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation-recombination mechanisms regarding tunneling phenomena. For the advanced devices employing multiple junction, all the material parameters are described as a function of the position. The simulations are performed for some devices such as photo-voltaic devices and two color detectors to prove the validity of the overall models in the simulator and its capability.