Publication | Closed Access
(InAs)<sub>1</sub>(GaAs)<sub>1</sub> Layered Crystal Grown by MOCVD
89
Citations
8
References
1984
Year
SemiconductorsMaterials ScienceElectrical EngineeringLayered CrystalsLow Growth RateEngineeringIi-vi SemiconductorCrystal Growth TechnologySurface ScienceApplied PhysicsQuantum MaterialsMonolayer GrowthMolecular Beam EpitaxyEpitaxial GrowthCrystallographyChemical Vapor DepositionCompound Semiconductor
(InAs) 1 (GaAs) 1 layered crystals (LC) were successfully grown on (100) InP substrate for the first time. The growth method was metallorganic chemical vapor deposition (MOCVD). Monolayer growth was achieved by low growth rate and rapid change of gas composition. Layered crystals were confirmed by X-ray diffraction peaks at the (100) and (300) positions. The electrical and optical properties of (InAs) 1 (GaAs) 1 LC were also studied.
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