Japanese Journal of Applied Physics · 1984 · 89 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsChemical Vapor DepositionCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor Thin FilmsMetalorganic Chemical Vapor DepositionMetalorganic Vapor Phase EpitaxyOptical PropertiesSurface Optical PropertiesSynthesis Of Monolayer SemiconductorsX-ray Diffraction Analysis
(InAs) 1 (GaAs) 1 layered crystals (LC) were successfully grown on (100) InP substrate for the first time. The growth method was metallorganic chemical vapor deposition (MOCVD). Monolayer growth was achieved by low growth rate and rapid change of gas composition. Layered crystals were confirmed by X-ray diffraction peaks at the (100) and (300) positions. The electrical and optical properties of (InAs) 1 (GaAs) 1 LC were also studied.
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Gallium Arsenide and Related Compounds
Bob Wilson · Physics Bulletin · 1973 · 694 citations
Natural Sciences, Chemistry, Physics +10
E. Bauer, H. Poppa · Thin Solid Films · 1972 · 514 citations