Ion implanted bipolar high performance transistors with polysil emitter

Abstract

Due to high doping effects, bipolar transistors generally show emitter efficiencies for below theoretical values. Additionally emitter base leakage currents can be high especially for double implant. ed transistors with arsenic emitter. In this paper integrated high frequency transistors (f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> > 3 GHz) with improved characteristics are investigated. Discussed are emitter efficiency, current-carrying capability and emitter base characteristics, achieved by applying the polysil emitter technique and ion implantation.