Thermoelectric properties and a device based on n-InSb and p-InAs

Abstract

The authors measured the temperature dependence of thermoelectric properties and fabricated a device based on n-InSb and p-InAs bulk crystals. The temperature was ranged from 300to600K. The power factor of n-InSb was over 10−3W∕mK2 over the entire temperature range, and that of p-InAs was nearly 10−3W∕mK2 between 300 and 500K. The open output voltage and the maximum output power of the device were 323mV and 186.0μW, respectively, when the temperature difference was 160K. The authors proposed a device with impedance matching and a capacitor, and found that in the time-averaged region, the output power became a maximum, even when the internal resistance of the device was not equal to the load resistance.