Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of Al<i>y</i>Ga1−<i>y</i>As-GaAs-In<i>x</i>Ga1−<i>x</i>As quantum well heterostructure lasers in an external grating cavity

Abstract

Data are presented on p-n AlyGa1−yAs- GaAs-InxGa1−xAs quantum well heterostructure lasers showing that the large band filling range of a combined GaAs-InxGa1−xAs quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696–9711 Å range (Δλ∼1000 Å, Δℏω∼150 meV) and pulsed operation in the 8450–9756 Å range (Δλ∼1300 Å, Δℏω∼200 meV). The band filling and gain profile are shown to be continuous from the InxGa1−xAs quantum well (Lz ∼125 Å, x∼0.2) up into the surrounding GaAs quantum well (Lz ∼430 Å).