{113} Loops in electron-irradiated silicon

Abstract

Abstract Specimens of silicon have been irradiated at 1 MV, at temperatures between 300° and 650°C in a high-voltage electron microscope. Observations made during irradiation, taken together with more detailed analyses carried out using the weak-beam technique at 100 kV, show that the damage consists of faulted loops which are elongated along 〈110〉 on {113} and have b≍a/ll〈113〉. These defects may unfault during irradiation to form interstitial loops of b = a/2〈110〉. The significance of these observations is discussed in terms of earlier work on irradiated silicon and germanium.