Hall Effect and Resistivity of Zn-Doped GaAs

Abstract

The Hall effect and resistivity of GaAs doped with zinc to a concentration range 1×1017 to 1×1019 zinc atoms/cm3, were measured as a function of temperature from 4° to 750°K. The electrical data are correlated with zinc concentration determined by radiotracer techniques to show that zinc in GaAs in this concentration range is a singly ionized acceptor. The ionization energy of zinc is shown to be concentration dependent, varying from 0 eV at 1×1019 to 0.024 eV at 1×1017 zinc atoms/cm3.