Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Abstract

Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs- and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.