Magnetoresistance of disordered graphene: From low to high temperatures

Abstract

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T=1.7$ K up to room temperature. The MR exhibits a maximum in the temperature range 120--240 K. The maximum is observed at intermediate magnetic fields ($B=2--6$ T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low-field magnetoresistance increases continuously with $T$ and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high-field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long- and short-range disorder in these samples.