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Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots
34
Citations
19
References
2001
Year
Materials ScienceIi-vi SemiconductorNanoscale SciencePhotoluminescenceEngineeringPhysicsIsland Luminescence EnergiesNanotechnologyCompound SemiconductorApplied PhysicsQuantum DotsWetting LayersPhotoluminescence StudyPyramid/dome TransitionBimodal Size DistributionLuminescence PropertyOptoelectronicsSilicon On Insulator
This work presents a study on the effect of a bimodal size distribution and of the pyramid/dome transition to the optical properties of self-assembled Ge/Si quantum dots. The wetting layers are shown to be inhomogeneous in thickness due to lateral diffusion of Ge from two-dimensional (2D) layers towards islands of bimodal sizes, while the island-related photoluminescence remains unchanged. The results indicate that three-dimensional islands, at their early stages of nucleation, are formed by consuming Ge from 2D layers and that the island luminescence energies are more sensitive to Ge/Si interdiffusion than the confinement effect inside the islands as currently believed.
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