Physical review. B, Condensed matter · 2001 · 34 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsOptical MaterialsSemiconductor MaterialsNanostructured Electronic MaterialsQuantum ConfinementQuantum DotsSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsBimodal DistributionInterdiffusionLateral Dopant DiffusionOptical PropertiesPhotoluminescenceSelf-assembled Quantum DotsSemiconductor Quantum DotsWetting
This work presents a study on the effect of a bimodal size distribution and of the pyramid/dome transition to the optical properties of self-assembled Ge/Si quantum dots. The wetting layers are shown to be inhomogeneous in thickness due to lateral diffusion of Ge from two-dimensional (2D) layers towards islands of bimodal sizes, while the island-related photoluminescence remains unchanged. The results indicate that three-dimensional islands, at their early stages of nucleation, are formed by consuming Ge from 2D layers and that the island luminescence energies are more sensitive to Ge/Si interdiffusion than the confinement effect inside the islands as currently believed.
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Near-band-gap photoluminescence of Si-Ge alloys
J. Weber, M. I. Alonso · Physical review. B, Condensed matter · 1989 · 561 citations