Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film Transistor

Abstract

Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O (a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface stability between Mo, Al, and Cu electrode and a-IGZO semiconductor have been investigated before and after air-annealing. No inter-diffusion and interfacial reaction has been observed between Mo and a-IGZO and the turn-on voltage of the Mo electrode TFT was 0 V after annealing. As for Al, Al oxide was formed at the interface, and the number of conduction electrons in a-IGZO increased. Thus, a negative turn-on voltage was observed after air-annealing. As for Cu, Cu diffused into a-IGZO during air-annealing and acted as an acceptor. Therefore the a-IGZO TFT with a Cu electrode had a positive turn-on voltage and sub-threshold slope increased after air-annealing. These results indicate that the transistor performance can be affected by the metal types due to inter-diffusion or interfacial reaction between metal and a-IGZO.