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Room‐Temperature Ferroelectricity in Hexagonal TbMnO<sub>3</sub> Thin Films
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Citations
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References
2014
Year
Materials ScienceMaterials EngineeringMultiferroicsRoom‐temperature FerroelectricityFunctional PropertiesEngineeringMaterial AnalysisFerroelectric ApplicationNanotechnologyOxide ElectronicsApplied PhysicsCondensed Matter PhysicsThin FilmsEpitaxial GrowthFunctional MaterialsPiezoresponse Force Microscopy
Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.
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