Newly developed matrix-type semiconductor detector for temporally and spatially resolved x-ray analyses ranging down to a few tens eV using a single plasma shot

Abstract

For the purpose of the measurements of temporally and spatially resolved electron temperatures (Te) during a single plasma shot alone, we propose and fabricate a new matrix-type semiconductor x-ray detector. This detector is fabricated using the precise formation of thin dead layers (SiO2) with six different thicknesses (from 10 to 5000 Å) aligned in line on its surface compactly. Each “row” has seven channels for the measurements of plasma x-ray radial profiles so as to make x-ray tomographic reconstructions; namely, the compact-sized matrix detector having six rows and seven columns with a 5×5 mm2 active area for each matrix unit. These various SiO2 layers are proposed to be utilized as ultrathin “x-ray absorption filters” with different thicknesses, which are never obtained as “self-supporting material absorbers” because of their ultrathin properties. This novel idea enables us to analyze x-ray tomography data including in the Te region down to a few tens eV. The simultaneous comparison of each tomographically reconstructed data from each detector row provides the temporal evolution of energy-resolved x-ray or Te profiles using “the absorption method.” The first application of this newly developed matrix detector is made to obtain Te profiles in the GAMMA 10 tandem mirror.