Physics of Ion Plating and Ion Beam Deposition

TLDR

Ion plating relies on dominant mechanisms that affect throwing power and film quality, and is influenced by ambient gas background and the physics of ion beam deposition. The study aims to minimize harmful effects of contaminant gas background by examining factors that influence throwing power and film quality. The authors analyze how chamber pressure, electrical bias, and a coevaporant source impact deposition rate, film quality, and throwing power. Phys.

Abstract

A review of some dominant mechanisms in ion plating is made. Factors influencing throwing power and film quality are discussed and the damaging effects of a high ambient gas background are considered with a view toward minimizing the harmful effects of contaminant gas background. The physical mechanisms involved in an ion beam deposition process [S. Aisenberg and R. Chabot, J. Appl. Phys. 42, 2953 (1972)] are examined. The effects of chamber pressure, electrical bias arrangements, and the introduction of a coevaporant source are discussed with regard to deposition rate, ultimate film quality, and throwing power of the system.