Applied Physics Letters · 2001 · 113 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser OpticsLaser PhysicsPhotonic Integrated CircuitsQuantum OptoelectronicsSemiconductor LasersContinuous OperationCurrent DensityHigh-power Semiconductor LasersLaser CladdingQuantum Cascade LasersQuantum Cascade StructuresSemiconductor Laser Fabrication
High average power quantum cascade lasers at 9.3 μm using InP top cladding layers and both junction up and junction down mounting are presented. A 3 mm long, junction up mounted device emitted 54 mW average power at 30 °C and 11.5% duty cycle with a threshold current density of 3.72 kA/cm2. A similar, but only 1.5 mm long device with high reflection coating on both facets was mounted junction down and tested at even higher duty cycles. At −27 °C, we achieved continuous wave operation with a threshold current density of 3.3 kA/cm2.
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