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Temperature Dependence of the Wavelength-Modulation Spectra of GaAs
64
Citations
8
References
1970
Year
Categoryquantum ElectronicsEngineeringTemperature DependenceSpectroscopic PropertySemiconductorsReflectivity SpectrumIi-vi SemiconductorOptical PropertiesQuantum MaterialsCompound SemiconductorPhotonicsPhysicsThermal PhysicsWavelength-modulation SpectroscopyNatural SciencesSpectroscopyApplied PhysicsCondensed Matter PhysicsOptoelectronics
Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the reflectivity spectrum for GaAs. Results are given in the regions of the ${E}_{1}$ doublet and the major ${E}_{2}$ peak at 5, 80, 150, 225, and 300\ifmmode^\circ\else\textdegree\fi{}K. The theoretical temperature dependence in these regions is obtained through use of Debye-Waller factors and thermal expansion coefficients in an empirical pseudopotential calculation of the ${\ensuremath{\Lambda}}_{3}\ensuremath{-}{\ensuremath{\Lambda}}_{1}$ and ${\ensuremath{\Sigma}}_{2}\ensuremath{-}{\ensuremath{\Sigma}}_{1}$ energy splittings.
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