IEEE Microwave and Wireless Components Letters · 2004 · 91 citations · 4 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignLow-noise Circuit DesignNoiseRadio-frequency Integrated CircuitsCmos Microwave AmplifiersFrequency-dependent GainGainLow-noise AmplifiersNoise FigureNoise Figure AnalysisNoise Performance AnalysisPeak Gain
Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is >+2 dBm for both LNAs with a current consumption of 30 mA from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.
4